PROCESS FOR FORMING AN INTERMETALLIC LAYER
 Inventors: Robert W. Fiordalice, Austin; Stanley M. Filipiak, Pflugerville; Johnson O. Olowolafe; Hisao Kawasaki, both of Austin, all of Tex.
 Assignee: Motorola, Inc., Schaumburg, 111.
 Appl. No.: 24,042
 Filed: Mar. 1, 1993
 Int. C1.5 H01L 21/44
 U.S. CI 437/192; 437/194;
 Field of Search 437/192, 194, 245, 246
 References Cited
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4,619,038 10/1986 Pintchovski 29/590
4,698,244 10/1987 Benander et al 427/253
5,225,372 7/1993 Savkar 437/190
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[ii] Patent Number: 5,358,901  Date of Patent: Oct. 25,1994
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Primary Examiner—Robert Kunemund
Assistant Examiner—Joni Y. Chang
Attorney, Agent, or Firm—George R. Meyer
The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a metal-containing gas, wherein the metals of the layer and gas are different. In one embodiment of the present invention, titanium aluminide may be formed on the sides of an interconnect. The process may be performed in a variety of equipment, such as a furnace, a rapid thermal processor, a plasma etcher, and a sputter deposition machine. The reaction to form the intermetallic layer is typically performed while the substrate is at a temperature no more than 700 degrees Celsius.
36 Claims, 3 Drawing Sheets