Manufacturing method of thin film transistor panel

(54) MANUFACTURING METHOD OF THIN FILM TRANSISTOR PANEL

(75) Inventors: Yuan-Tung Dai, Taoyuan Hsien (TW);

Chi-Shen Lee, Hsinchu (TW); Jiun-Jye
Chang, Kaochung (TW)

(73) Assignee: Industrial Technology Research
Institute, Hsinchu (TW)

( * ) Notice: Subject to any disclaimer, the term ol this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

(21) Appl. No.: 09/918,511

(22) Filed: Aug. 1, 2001

(65) Prior Publication Data

US 2002/0187572 Al Dec. 12, 2002 (30) Foreign Application Priority Data

Jun. 7, 2001 (TW) 90113766 A

(51) Int. CI.7 H01L 21/00

(52) U.S. CI 438/151; 438/29; 438/30;

438/149; 438/152

(58) Field of Search 438/29, 30, 149,

438/151, 152

(56) References Cited

U.S. PATENT DOCUMENTS

5,705,424 A * 1/1998 Zavracky et al 438/30

5,880,010 A * 3/1999 Davidson 438/455

6,022,751 A * 2/2000 Shindo et al 438/21

6,057,557 A * 5/2000 Ichikawa 257/59

6,127,199 A * 10/2000 Inoue et al 438/30

6,372,608 Bl * 4/2002 Shimoda et al 438/455

* cited by examiner

Primary Examiner—-John F. Niebling
Assistant Examiner—Stanetta Isaac

(74) Attorney, Agent, or Firm—Birch, Stewart, Kolasch & Birch, LLP

(57) ABSTRACT

A method for manulacturing thin film transistor panels in order to obviate the lowstability ol conventional laser annealing processes, and the resultant low quality ol the produced poly crystal silicon thin film. According to the method ol the invention, form a transparent insulator on the front surface ol a silicon substrate. Form a thin film transistor structure and transparent electrode on the upper surlace ol the transparent insulator. Bond a transparent substrate onto the front surface ol the silicon substrate. Alter that, remove a portion ol the silicon substrate by polishing or etching the back ol the silicon substrate to obtained a transparent thin film transistor panel. The transparent electrode can also be formed on the bottom surface ol the transparent insulator. Also, the transparent substrate can be bonded onto the back ol the silicon substrate. Then reduce the thickness ol the silicon substrate to generate a crystal silicon thin film. Form a thin film transistor structure layer and the transparent electrode required by the thin film transistor panel on the crystal silicon thin film.

34 Claims, 6 Drawing Sheets