FOREIGN PATENT DOCUMENTS
1-232755 9/1989 Japan .
A New Epitaxy Technique for Device Isolation and Advanced Device Structures, P. Schubert and G. Neudeck, School of Electrical Engineering, Purdue University, W. Lafayette, Ind.
Confined Lateral Selective Epitaxial Growth of Silicon for Device Fabrication, P. Schubert and G. Neudeck, IEEE Electron Device Letters, vol. 11, No. 5, May 1990, pp. 181-183.
Three-Dimensional MOS Process Development, J. Freidrich and G. Neudeck, School of Electrical Engineering. Purdue University, TR-FR 89-7, Feb. 1989. A New Epitaxial Lateral Overgrowth Silicon Bipolar Transistor, G. W. Neudeck, IEEE Electron Device Letters, vol. EDL-8, No. 10, Oct. 1987, pp. 492-495. Self-Aligned Bipolar NPN Transistor with 60 nm Epitax
ial Base, J. N. Burghartz et al., IEEE, Jul. 1989, pp. 229-232.
Interface Characterization of Silicon Epitaxial Lateral Growth over Existing SiOzfor Three-Dimensional CMOS Structures, J. A. Friedrich, G. W. Neudeck, IEEE Electron Device Letters, vol. 10, No. 4, Apr. 1989, pp. 144-146.
Thermal Oxidation of Heavily Doped Silicon, B. E. Deal and M. Sklar, Journal of the Electrochemical Society, vol. 112, No. 4, Apr. 1965, pp. 430-435. Basic: An Advanced High-Performance Bipolar Process, J. van der Velden et al., IEEE, Jul. 1989, pp. 233-236. A Lateral Silicon-on-Insulator Bipolar Transistor with a Self-Aligned Base Contact, J. C. Sturm et al., IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 104-106.
Selective Epitaxial Growth Silicon Bipolar Transistors for
Material Characterization, James W. Siekkinen et al.,
IEEE Transactions on Electron Devices, vol. 35, No.
10, Oct. 1988, pp. 1640-1644.
Primary Examiner—Olik Chaudhuri
Assistant Examiner—Long Pham
Attorney, Agent, or Firm—Bell, Seltzer, Park & Gibson
An integrated circuit vertical bipolar transistor includes monocrystalline emitter, base and collector contacts for electrically contacting the transistor's emitter, base and collector regions, respectively. The collector, base contact and emitter contact are preferably insulated from one another by oxide regions which are formed from the monocrystalline collector and monocrystalline base contacts. Since all of the contacts are formed of monocrystalline material and the oxide isolation is formed from monocrystalline material, high performance devices are formed.
The process of forming the transistor self aligns the base to the collector and the emitter to the base. The monocrystalline base contact is also self aligned to the base and the monocrystalline emitter contact is self aligned to the emitter. The process preferably uses epitaxial lateral overgrowth and selective epitaxial growth from a mesa region to form the monocrystalline contacts. A shallow phosphorus implant into the base contact is used to preferentially grow the oxide between the base contact and emitter contact.
16 Claims, 9 Drawing Sheets