« PreviousContinue »
(12) United States Patent ao) Patent No.: Us 7,880,186 B2
Gardner et al. (45) Date of Patent: Feb. 1,2011
(54) III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMITTING REGION
(75) Inventors: Nathan F. Gardner, Sunnyvale, CA
(US); Gangyi Chen, San Jose, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Michael R. Krames, Los Altos, CA
(US); Gerd O. Mueller, San Jose, CA
(US); Yu-Chen Shen, Sunnyvale, CA
(US); Satoshi Watanabe, Cupertino, CA
(73) Assignees: Koninklijke Philips Electronics N.V.,
Eindhoven (NL); Phillips Lumileds
Lighting Company, LLC, San Jose, CA
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl.No.: 11/682,276
(22) Filed: Mar. 5, 2007
(65) Prior Publication Data
US 2007/0145384 Al Jun. 28, 2007
Related U.S. Application Data
(63) Continuation of application No. 11/211,921, filed on Aug. 24, 2005.
(51) Int. CI.
H01L 33/00 (2010.01)
(52) U.S. CI 257/94; 257/979; 257/101;
(58) Field of Classification Search 257/79,
257/94, 101-103, 85, 90 See application file for complete search history.
FOREIGN PATENT DOCUMENTS EP 0890997 A2 1/1999
Shuji Nakamura et al., "High-brightness InGaN/AIGaN doubleheterostructure blue-green-light- emitting diodes." J. Appl. Phys. 76 (12), Dec. 15, 1994, American Institute of Physics, pp. 8189-8191.
Primary Examiner—Eugene Lee
In a device, a Ill-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6xl018 cm-3 and 5xl019 cm-3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6xl018 cm-3.
18 Claims, 9 Drawing Sheets
Blocking Layer 38
Second Spacer 37
Light Emitting Region 35
First Spacer 33
Preparation Layer 32
Shuji Nakamura et al., "Candela-class high-brightness InGaN/ AIGaN double-heterostracture blue-light-emitting diodes," Appl. Phys. Lett. 64 (13), Mar. 28, 1994, American Institute of Physics, pp. 1687-1689.
Shuji Nakamura et al, "P-GaN/N-InGaN/N-GaN DoubleHeterostructure Blue-Light-Emitting Diodes," Jpn. J. Appl. Phys. vol. 32 (1993), Part 2, No. 1A/B, Jan. 15, 1993, pp. L8-L11.
Mukai et al., "High-power UV InGaN/AlGaN doubleheterostracture LEDs"Journal of Crystal Growth, vol. 189-190, Jun. 15, 1998, pp. 778-781.
Kneissl et al, "Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure", Applied Physics Letters, American Institute of Physics, vol. 75, No. 4, Jul. 26, 1999, pp. 581-583.
* cited by examiner