[54] COMPOUND SEMICONDUCTOR AND
METHOD OF MANUFACTURING THE SAME
[75] Inventor: Hiroshi Iwasaki, Yokohama, Japan
[73] Assignee: Kabushiki Kaisha Toshiba, Kawasaki, Japan
[21] Appl. No.: 340,478
[22] Filed: Nov. 14,1994
Related U.S. Application Data
[63] Continuation of Ser. No. 232,583, Apr. 25, 1994, abandoned, which is a continuation of Ser. No. 7,024, Jan. 21, 1993, abandoned, which is a continuation of Ser. No. 653,295, Feb. 11, 1991, abandoned.
[30] Foreign Application Priority Data
Feb. 14, 1990 [JP] Japan 2-032697
[51] Int. CI.6 H01L 21/02
[52] U.S. CI 117/88; 117/108; 117/954;
117/955; 437/96; 437/107; 437/109; 437/912
[58] Field of Search 117/88, 108, 954,
117/955; 437/96, 109, 107, 912
[56] References Cited
U.S. PATENT DOCUMENTS
4,233,092 11/1980 Harris et al 437/107
4,281,029 7/1981 Takagi et al 437/107
4,632,710 12/1986 Van Rees 437/107
4,732,870 3/1988 Mimura 437/107
4,746,626 5/1988 Eda et al 437/107
4,804,635 2/1989 Young 437/192
4,935,381 6/1990 Speckman et al 437/96
FOREIGN PATENT DOCUMENTS
54-106169 8/1979 Japan 437/96
55- 91816 7/1980 Japan .
56- 27972 3/1981 Japan 437/104
59-184570 10/1984 Japan .
62-65407 3/1987 Japan .
64-82569 3/1989 Japan 437/104
1-179411 7/1989 Japan 437/96
OTHER PUBLICATIONS
Applied Physics Letters, vol. 37, No. 8, Oct. 1980, New
York, U.S.A., pp. 734-737; "Growth of high-quality epi-
taxial GaAs films by sputter deposition", Barnett et al.
Applied Physics Letters, vol. 42, No. 1, Jan. 1983, New
York, U.S.A., pp. 66-68; "Growth of high-purity GaAs
layers by molecular beam epitaxy", Hwang et al.
Applied Physics Letters, vol. 42, No. 2, Jan. 1983, New
York, U.S.A., pp. 178-180; "Undoped, semi-insulating
GaAs layers grown by molecular beam epitaxy", Temkin et
al.
Materials Letters, vol. 5, No. 4, Mar. 1987, Amsterdam, NL,
pp. 129-133; "In-Doped GaAs Substrate Assessment for
Thin Film Applications", Ozawa et al.
Journal of Crystal Growth, vol. 100, No. 1/2, Feb. 1990,
Amsterdam, NL, pp. 5-10; "Characteristics of Carbon
Incorporation in GaAs Grown by Gas Source Molecular
Beam Epitaxy", Gotoda et al.
Primary Examiner—Robert Kunemund
Attorney, Agent, or Firm— Finnegan, Henderson, Farabow,
Garrett & Dunner, L.L.P.
[57] ABSTRACT
According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer.
6 Claims, 3 Drawing Sheets
