(19) Patent Application Publication (10) Pub. No.: US 2010/0187693 A1
Mountsier et al. (43) Pub. Date: Jul. 29, 2010 (54) DIFFUSION BARRIER LAYERS Publication Classification (51) Int. Cl. (75) Inventors: Thomas W. Mountsier, San Jose, H01L 23/48 (2006.01) CA (US); Roey Shaviv, Palo Alto, C23C 14/34 (2006.01) CA (US); Steven T. Mayer, Lake HOIL 21/44 (200601) Qswego, QR (US); Ronald A, (52) U.S. Cl. ............. .. 257/751; 204/192.25; 204/298.13; Powell’ Portola Valley’ CA (US) 438/627; 438/680; 438/687; 257/E23.019; 257/E21.295 Correspondence Address: (57) ABSTRACT
Weaver Austin Villeneuve & Sampson LLP - NOVL
Attn.: Novellus Systems, Inc.
P.O. Box 70250
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Provided are methods and apparatuses for depositing barrier layers for blocking diffusion of conductive materials from conductive lines into dielectric materials in integrated circuits. The barrier layer may contain copper. In some embodiments, the layers have conductivity suflicient for direct elec
(73) Assignee; Novellus systems, [no_ troplating of conductive materials without needing intermediate seed layers. Such barner layers may be used with circuits lines that are less than 65 mn wide and, in certain
(21) App1' NO‘: 12/359997 embodiments, less than 40 mn wide. The barrier layer may be passivated to fonn easily removable layers including sulfides,
(22) Filed: Jan. 26, 2009 selenides, and/or tellurides of the materials in the layer.
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