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US005522934A

United States Patent [19] [ii] Patent Number: 5,522,934

Suzuki et al. [45] Date of Patent: Jun. 4, 1996

[54] PLASMA PROCESSING APPARATUS USING VERTICAL GAS INLETS ONE ON TOP OF ANOTHER

[75] Inventors: Akira Suzuki; Shuichi Ishizuka, both of Nirasaki; Kohei Kawamura; Jiro Hata, both of Yamanashi, all of Japan

[73] Assignee: Tokyo Electron Limited, Tokyo, Japan

[21] Appl. No.: 428,363

[22] Filed: Apr. 25, 1995

[30] Foreign Application Priority Data

Apr. 26, 1994 [JP] Japan 6-110301

Jun. 27, 1994 [JP] Japan 6-167451

[51] Int. CI.6 C23C 16/00

[52] U.S. CI 118/723 AN; 118/723 ME;

118/723 MR; 118/723 MA; 118/723 R;

204/298.07

[58] Field of Search 204/298.07; 118/723 ME,

118/723 MW, 723 MR, 723 MA, 723 AN,

723 R

[56] References Cited

U.S. PATENT DOCUMENTS

301,933 5/1983 Steller .

4,383,177 5/1983 Keller et al. .

4,384,938 5/1983 Desilets et al. .

4,948,458 8/1990 Ogle .

4,992,301 2/1991 Shishiguchi et al 437/81

5,105,761 4/1992 Charlet et al 118/723 ME

[blocks in formation]

A plasma processing apparatus comprises a susceptor for supporting a target object to be processed having a target surface to be processed in a process vessel, a plurality of process gas supply nozzles for supplying a process gas for the target object into the process vessel, and an RF coil for generating an electromagnetic wave in the process vessel to generate a plasma of the process gas. The supplying nozzles have process gas injection holes formed at a plurality of levels in a direction substantially perpendicular to the target surface of the target object in the process vessel, and the gas injection holes located at an upper level are closer to a center of the target surface than gas injection holes located at a lower level.

14 Claims, 10 Drawing Sheets

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