United States Patent m
Imagawa et al.
[li] Patent Number: 4,839,701  Date of Patent: Jun. 13,1989
 HYDROGENATED AMORPHOUS SILICON FILM
 Inventors: Osamu Imagawa; Masazumi Iwanishi;
Seiichiro Yokoyama, all of Otsu,
 Assignee: Toyo Boseki Kabushiki Kaisha,
 Appl. No.: 258,118
 Filed: Oct. 14,1988
Related U.S. Application Data
 Continuation of Ser. No. 870,035, Jun. 3, 1986.
 Foreign Application Priority Data
Jun. 3, 1985 [JP] Japan 60-121217
 int. CL* H01L 45/80
 U.S. a 357/2; 357/30
 Field of Search 357/2, 30 K, 59
 References Cited
U.S. PATENT DOCUMENTS
4,409,605 10/1983 Ovshinsky 357/2
4,620,085 10/1986 Wenteriing 357/30 K
Primary Examiner—Martin H. Edlow
Attorney, Agent, or Firm—Wegner & Bretschneider
A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm2 at 780 nm, which comprises supplying a gas selected from the group consisting of SiHt, SiF4 and Si2H6 into a discharge space, and subjecting the gas to glow discharge within the discharge space having a gradient discharge intensity.
The present invention provides an a-SiH film which has a remarkable high sensitivity in a long wavelength region with maintaining a high photosensitivity in a visible light region, and has a remarkable less defect density, and the process for production of such film in a high deposition rate.
2 Claims, 3 Drawing Sheets