(12) United States Patent ao) Patent No.: Us 7,629,222 B2
Park et al. (45) Date of Patent: Dec. 8,2009
(54) METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
(75) Inventors: Kang-wook Park, Seoul (KR);
Hyung-moo Park, Seoul (KR)
(73) Assignee: Samsung Electronics Co., Ltd.,
Suwon-si, Gyeonggi-do (KR)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl.No.: 11/651,523
(22) Filed: Jan. 10, 2007
(65) Prior Publication Data
US 2007/0202656 Al Aug. 30, 2007
(30) Foreign Application Priority Data
Jan. 11,2006 (KR) 10-2006-0003270
(51) Int. CI.
H01L 21/331 (2006.01)
H01L 21/461 (2006.01)
(52) U.S. CI 438/396; 438/733; 257/E21.008;
(58) Field of Classification Search 438/393 399;
257/E21.008, E21.017 See application file for complete search history.
(56) References Cited
U.S. PATENT DOCUMENTS
6,319,767 Bl* 11/2001 Chaetal 438/250
6,924,207 B2* 8/2005 Sonetal 438/396
A method of fabricating a semiconductor device includes forming a first electrode, sequentially forming a first dielectric film, a conductive film for a second electrode, a second dielectric film, and a conductive film for a third electrode above the first electrode, forming a first pattern on the conductive film for a third electrode, the first pattern defining a second electrode, forming the second electrode by sequentially patterning the conductive film for the third electrode, the second dielectric film, and the conductive film for the second electrode, using the first pattern as an etching mask, partially removing the first pattern to form a second pattern that defines a third electrode, and forming the third electrode by patterning the conductive film for the third electrode, using the second pattern as an etching mask, wherein the third electrode has a width less than that of the second electrode.
17 Claims, 7 Drawing Sheets