Lithography systems and processes

US008072577B2

(12) Ullltfild States Patent (10) Patent No.: US 8,072,577 B2 Wu et al. (45) Date of Patent: Dec. 6, 2011 (54) LITHOGRAPHY SYSTEMS AND PROCESSES 2.233. ghen et all. , , ung et a . (75) Inventors: Tzong Hsien Wu, Hsinchu (TW); Ta firzlifllilstelg 31' Hung Yang, Hsinchu (TW); Chih Yuan 6,891,596 B2 5/2005 Rostalski et al. Lu, Hs1nchu (TW) (Continued) (73) Assignee: MACRONIX International Co., Ltd., FOREIGN PATENT DOCUMENTS Hsmchu (TW) CN 1637612 7/2005 ( * ) Notice: Subject to any disclaimer, the term of this (comlnued) patent is extended or adjusted under 35 U.S.C. 154(b) by 1037 days. OTHER PUBLICATIONS 2nd Office Action of China counterpart application, issued on Mar. (21) Appl. No.: 11/422,284 27, 2009, p1-p7. (22) Filed: Jun. 5, 2006 (Continued) . . . Primary Examiner * Hung Henry Nguyen 65 P P bl D ( ) nor u lcatlon ata Assistant Examiner * Colin Kreutzer Us 2007/0279604 A1 Dee 6, 2007 (74) Attorney, Agent, or Firm * Jianq Chyun IP Oflice (51) Int. Cl. (57) ABSTRACT 2 An exemplary lithography process may include: receiving a ( ' ) substrate having a photo-sensitive layer; providing a light G03B 27/52 (200601) source capable of causing an exposure of a portion of the G033 2 7/54 (200601) photo-sensitive layer; and providing a mask capable of defin(52) U.S. C1. ............. .. 355/55; 355/67; 355/77; 359/814 ing at least one pattarn that is tO be transferred t0 the phOtO_ Of Classification Search .................. .. 8, sensitive layep Speejfieallys the substrate has a top surface on 355/55, 67, 53, 77; 359/222-1, 684, 696, or over the photo-sensitive layer, and the mask receives an _ _ 359/703, 813T814; 430/322; 977/ 887 electromagnetic wave from the light source at a first surface of See appheatlon file for eomplete Search h15tO1'§’- the mask and generates a plurality of electromagnetic com_ ponents from a second surface of the mask. The lithography (56) References Clted process may also include: providing a lens, which provides a