(12) United States Patent ao) Patent No.: Us 7,273,766 Bi
Lan et al. (45) Date of Patent: Sep. 25,2007
(73) Assignee: Spansion LLC, Sunnyvale, CA (US)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 373 days.
(21) Appl. No.: 11/034,071
(22) Filed: Jan. 12, 2005
(51) Int. CI.
H01L 21/00 (2006.01)
(52) U.S. CI 438/82; 438/99; 257/40
(58) Field of Classification Search 438/82;
See application file for complete search history.
(56) References Cited
U.S. PATENT DOCUMENTS
4,753,861 A * 6/1988 Tsou et al 430/19
6,656,763 Bl 12/2003 Oglesby et al.
6,686,263 Bl 2/2004 Lopatin et al.
6,746,971 Bl 6/2004 Ngo et al.
6,753,247 Bl 6/2004 Okoroanyanwu et al.
6,766,157 Bl* 7/2004 Hunzeker et al 455/317
An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and/or low resistive state can provide a fast and/or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and/or an imminent power state.
28 Claims, 17 Drawing Sheets