APPARATUS FOR FORMING SINGLE-
CRYSTALLINE THIN FILM BY BEAM
IRRADIATOR AND BEAM REFLECTING
 Inventors: Toshifumi Asakawa, Yamato:
Masahiro Shindo. Suita; Toshikazu
Yoshimizu. Suita; Sumiyoshi Ueyama.
Suita. all of Japan
 Assignees: Neuralsystems Corporation. Tokyo;
Mega Chips Corporation. Suita. both of Japan
 Appl. No.: 820,599
 Filed: Mar. 19, 1997
Related U.S. Application Data
 Continuation of Ser. No. 598.221, Feb. 7, 1996, abandoned, which is a division of Ser No. 239,969, May 9, 1994, abandoned.
 Foreign Application Priority Data
Oct. 14, 1993 [JP] Japan 5-281748
Oct. 20, 1993 [JP] Japan 5-285674
Dec. 10, 1993 [JP] Japan 5-341281
Mar. 29, 1994 [JP] Japan 6-058887
 Int CI.6 C23C 16/00
 U.S. CI 118/723 CB, 118/723 FI;
1187723 FE; 117/103; 117/104: 438/486
 Field of Search 118/723 CB. 723 FE.
118/723 FI; 117/103. 104; 438/485. 486.
 References Cited
U.S. PATENT DOCUMENTS
4,793,908 12/1988 Scott et al 204/192.26
4,800,100 1/1989 Herbots et al 118/623
4,888,202 12/1989 Murakami et al 427/42
4,925,829 5/1990 Fujjita et al 427/255.3
FOREIGN PATENT DOCUMENTS
2208875 4/1989 United Kingdom .
In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD. a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an Si02 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11). while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate. (FIG. 13)
12 Claims, 55 Drawing Sheets