[54] HOT-WALL CVD METHOD FOR FORMING A FERROELECTRIC FILM
[75] Inventors: Seaung Suk Lee; Ho Gi Kim; Jong Choul Kim; Soo Han Choi, all ol
Bubaleub, Rep. ol Korea
[73] Assignee: Hyundai Electronics Industries Co., Ltd., Rep. ol Korea
[21] Appl. No.: 932,344
[22] Filed: Sep. 17, 1997
Related U.S. Application Data
[63] Continuation of Ser. No. 476,734, Jun. 7, 1995, abandoned. [30] Foreign Application Priority Data
Jun. 8, 1994 [KR] Rep. of Korea 1994-12900
[51] Int. CI. C23C 16/40
[52] U.S. CI 427/255.3; 427/255.2;
427/255.1; 427/126.3
[58] Field of Search 427/255.3, 255.2,
427/255.1, 126.3, 248.1; 118/719, 724
[56] References Cited
U.S. PATENT DOCUMENTS
4,625,678 12/1986 Shioya et al 118/723
The present invention is to provide a method lor forming lerroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps ol: heating the processing tube and a plurality ol receptacles which contain lerroelectric source materials; loading walers into said processing tube; conveying vaporized gases Irom said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the walers.
11 Claims, 8 Drawing Sheets
