(12) (10) Patent No.: US 7,888,843 B2 Ayazi et al. (45) Date of Patent: Feb. 15, 2011 (54) THIN-FILM 6,739,190 B2 5/2004 Hsu et al. PIEZOELECTRIC-ON-INSULATOR 7,199,504 B2 4/2007 Komuro et al. fig:g§i¥g§ig‘i\)‘gg(%€IE§1g?§ATED 7,202,761 B2 4/2007 Lutz et al. 7,280,007 B2 10/2007 Feng et al. (75) Inventors: Farrokh Ayazi, Atlanta, GA (U S); Logan D. Sorenson, Atlanta, GA (US) (73) Assignee: Georgia Tech Research Corporation, (Continued) Atlanta GA (US) FOREIGN PATENT DOCUMENTS ( * ) Notice: Subject to any disclaimer, the term of tl1is Ep 1 217 73 5 A1 6/2002 patent is extended or adjusted under 35 U.S.C. l54(b) by 0 days. (21) Appl. No.: 12/535,284 (Continued) (22) Filed: Aug. 4, 2009 OTHER PUBLICATIONS (65) Pfigf Publicatign Data Baborowski et al., “Piezoelectrically Activated Silicon Resonators”, IEEEF C tr lS ' ,2007J ' t 'thth 2ls’E Us A1 pean 4:33:32; ,3; ;1m:t§::;::,mM,y 1, XP03ll38l58, t' I. Related U.S. Application Data Sec Ion (63) Continuation-in-part of application No. 12/233,395, (Continued) filed on Sep. 18, 2008, now Pat. No. 7,800,282. Primary Examl~ne,,_Mark Budd (60) Provisional application No. 61/095,776, filed on Sep. (74) Anome)/I A891", 0?’ Fl7’m*MYer5 Bigel Sibley & 10, 2008. Saiovec (51) Int. Cl. (57) ABSTRACT H01L 41/08 (2006.01) (52) U.S. Cl. ...................... .. 310/324; 310/312; 310/320 (58) Field of Classification Search ............... .. 310/312, A micro-electromechanical resonator self-compensates for 310/320 process-induced dimensional variations by using a resonator See appljcafign file fQ1' Qgmplete Search hj5tQ1'y_ body having a plurality of perforations therein. These perfo56 R f C_ d rations may be spaced along a longitudinal axis of the reso( ) e erences lte nator body, which extends orthogonal to a nodal line of the
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