Page 2
U.S. PATENT DOCUMENTS 7,220,657 B2 5/2007 Ihara A /512/212 3% 2/522119.198 5,631,499 A 5/1997 Hosomi 7,405,149 B1 * 7/2008 Lin it al. ..................... .. 438/622 5,656,858 A 8/1997 Kondo et al. ............... .. 257/737 7’456’089 B2 U/2008 Aiba 5,656,863 A 8/1997 Yasunaga 7’462’942 B2 12/2008 Tan 5,664,642 A 9/1997 Williams ’ ’
2001/0040290 A1 11/2001 Sakura1
5,729,896 A 3/1998 Dalal et al. .................... .. 29/840 2002/0043723 A1 4/2002 Sh- 5,736,791 A 4/1998 Fujiki 2002/0127836 A1 * 9/2002 Lirllrgtzdl 438/612 ggggggg A 21332 iakrrnwortthl 438/51 2003/0006062 A1 1/2003 Stone 5,767,010 A 6/1998 M. me A """"""""""" " 2003/0111711 Al* 6/2003 Linetal. ..................... .. 257/635 5,854,513 A 12/1998 K.“ 2003/0133055 Al* 7/2003 Um etal. .. 349/43 5,877,078 A 3/1999 Ylm .da 2003/0137058 A1 * 7/2003 Magerlein etal. .......... .. 257/784 5,883,435 A 3/1999 Ganfgfl 2003/0218246 A1 11/2003 Abe 5,892,273 A 4/1999 I e E‘ 2004/0007779 A1 1/2004 Arbuthnot 5,898,222 A 4/1999 Fwas 1 2004/0070086 A1 * 4/2004 Lee etal. .................... .. 257/784 5903343 A 5/1999 Nigfgoq 2004/0126927 A1 * 7/2004 Lin et al. ..................... .. 438/107 539433597 A 8/ 1999 Kleffner FOREIGN PATENT DOCUMENTS 5,946,590 A 8/1999 Satoh JP 60217646 10/1985 5,985,765 A 11/1999 H ' 6,013,571 A 1/2000 M23211 JP 62160744 7/ 1987 6,028,363 A 2/2000 Lin JP 1061038 3/1989 6,042,953 A 3/2000 Yamaguchi JP 03022437 1/ 1991 6,075,290 A 6/2000 Schaefer JP 4278543 10/1992 6,077,726 A 6/2000 Mistry E 3312?; 15332 6,093,964 A 7/2000 Saitoh 6,144,100 A 11/2000 Shen JP 10107064 4/1998 6,144,102 A 11/2000 Amagai JP 2000260803 9/2000 6,162,652 A 12/2000 Dass JP 2002016096 1/2002 6,180,265 B1 1/2001 Erickson JP 2003133477 5/2003 6,187,680 B1 2/2001 Costrini JP 2003234367 8/2003 6,194,309 B1 2/2001 Jin JP 2003282788 10/2003 6,197,613 B1 3/2001 Kung JP 2006128662 5/2006 6,198,619 B1 3/2001 Fujioka JP 2006147810 6/2006 6,229,220 B1 5/2001 Saitoh TW 584950 4/2004 6,229,711 B1 5/2001 Yoneda W0 WO 87/01509 3/1987 6,238,599 B1 5/2001 Gelorme et al. ............ .. 252/514 6,250,541 B1 6/2001 Shangguan OTHER PUBLICATIONS Edelstein, D.C., “Advantages of Copper I-nterconnects,” Proceedings 6,323,426 B1 11/2001 Hoshizaki et 31‘ ““““ “ 174/70 R ofthe 12th Internat1onalIEEEVLSI Multrlevellnterconnectron Con6,332,988 B1 12/2001 Berger, Jr. ference (l995)pp. 301-307. 6,362,087 B1 3/2002 Wang Theng, C. et al. “An Automated Tool Deployment for ESD (Electro6,372,622 B1 4/ 2002 T2111 _ Static-Discharge) Correct-by-Construction Strategy in 90 nm Pro; gibayashl cess,” IEEE International Conference on Semiconductor Electronics
, , M18 (2004) pp. 61-67.
6,426,281 B1 7/2002 Lin Gao X et al “Anim - -
. , . . proved electrostatrc drscharge protectron structure for reducing triggering voltage andparasitic capacitance,” Solid6’452’270 Bl 9/2002 Hug; State Electronics, 27 (2003), pp. 1105-1110.
6,467,674 B 1 10/2002 Mihara Yeoh, A. et al. “Copper Die Bumps (First Level Interconnect) and 634793900 B1 11/2002 Shinogi LoW-K Dielectrics in 65nm High Volume Manufacturing,” Elec6 495 397 B2 12/2002 Kubota tronrc om onents an ec no 0 on erence .
, , ‘c p dTh1gyCf 2006pp1611 6,501,169 B1 12/2002 Aoki 1615.
6,518,651 B2 2/2003 Hashimoto Hu, C-K. et al. “Copper-Polyimide Wiring Technology for VLSI 6,573,598 B2 6/2003 Ohllchi Circuits,”MaterialsResearch SocietySymposiumProceedingsVLSI 253313‘ 91 9/522:
7 ’ ung Roesch, W. et al. “Cycling copper flip chip interconnects,” Microg€g%gg‘ 3% $883 fifigjfma electronics Reliability, 44 (2004) pp. 1047-1054.
’ ’ Lee, Y-H. et al. “Effect of ESD Layout on the Assembly Yield and 6’653’5-63 B2 U/2003 Bohr Reliability,” International Electron Devices Meeting 2006 pp. 1-4. 6,661,100 B1 12/2003 Anderson . 6,683,380 B2 1/2004 Efland Yeoh, T-S. “ESD Effects on Power Supply Clamps,” Proceedrngs of
the 6th International Syrnpoisum on Physical & Failure Analysis of 6,707,159 B1 3/2004 Kumamoto I dC_ _ (1997) 121 124 6,709,985 B1 3/2004 Goruganthu ntegrate lrcults PP~ ' ~ 6,731,003 B2 5/2004 Joshi Edelstein, D. et al. “Full Copper Wiring in a Sub-0.25 pm CMOS 6,732,913 B2 5/2004 Alvarez ULSI Technology,” Technical Digest IEEE International Electron 6,762,122 B2 72004 Mall: Devices Meeting (1997) pp. 773-776. 6,809,020 B2 10 2004 S urai Venkatesan, S. et al. “A High Performance 1.8V, 0.20 pm CMOS 6,815,324 B2 11/ 2004 Huang Technology With Copper Metallization,” Technical Digest IEEE g/Ftta t International Electron Devices Meeting (1997) pp. 769-772. 6’864’l65 Bl 3/2005 Polyaéno 0 Jenei, S.et al.“HighQInductorAdd-on Module inThickCu/SiLKTM 6’940’169 B2 9/2005 Jingg single damascene,” Proceedings from the IEEE International Inter6:998:7l0 B2 2/2006 Kobayashi connect Technology Conference (2001) pp. 107-109. 7,008,867 B2 3/2006 Lei Groves, R. et al. “High Q Inductors in a SiGe BiCMOS Process 7,034,402 B1 4/2006 Seshan UtilizingaThick Metal Process Add-on Module,” Proceedings of the 7,098,127 B2 8/ 2006 Ito Bipolar/BiCMOS Circuits and Technology Meeting (1999) pp. 1497,135,766 B1 11/2006 Costa 152.
