A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydrofluoric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack...http://www.google.com/patents/US7531468?utm_source=gb-gplus-sharePatent US7531468 - System and method for forming a gate dielectric