In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound...http://www.google.com/patents/US6995406?utm_source=gb-gplus-sharePatent US6995406 - Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
Multibeam semiconductor laser, semiconductor light-emitting device and ...
