52B. The third pipe portion 52C is connected to the vapor- through the carrier gas introduction port 80, and a annular
izing means 26, and an open-close valve V16 is provided groove 130 formed at an end portion of (his passage,
across the pipe portion 52C. Each vaporizing disk 120 employed in the vaporizing
That portion of the force-feed pipe 30 which is located section 140 has a single liquid material passing hole 120c
downstream of the open-close valve VI is connected, by 5 formed in a center portion thereof, and a plurality of carrier
means of a communication pipe 58, to that portion of the gas passing holes 120& formed around the passing hole
supply pipe line 22 which is located downstream of the 120a. The vaporizing disks 120 are arranged adjacent to
open-close valve Vll. An open-close valve V7 and a restric- each other such that the liquid material passing hole 120a
tion valve 56 are provided across the communication pipe corresponds to the passage 114. and the carrier gas passing
58. io holes 1202> correspond to the annular groove 130. These
To purge DMAH using a solvent at the time of cleaning disks are urged by an anvil 135 which contacts a compres
the pipe system, a solvent tank 64 is connected, via a solvent sion spring 136, such that they are brought into contact with
purge pipe 62. to that portion of the supply pipe line 22 eacn other.
which is located downstream of the open-close valve Vll. In the above-described structure, the liquid material 18
The solvent tank 64 contains a solvent for dissolving 15 introduced into the vaporizing means 26 through the liquid
DMAH, for example, normal hexane. An open-close valve introduction port 78 passes the passage 110, the valve
V20 and a restriction valve 60 capable of adjusting its valve mechanism 111 and the passages 112, 113 and 114, which
opening are arranged across the solvent purge pipe 62. To are formed in the main body of the means 26, and then enters
remove DMAH in the vaporizing means 26 a purging Ar gas clearances between the vaporizing disks 120 through the
source 66 is connected, via a purge pipe 68 with an open- 20 liquid material passing hole 120a. On the other hand, the
close valve V12, to that portion of the supply pipe line 22 carrier gas introduced into the vaporizing means 26 through
which is located downstream of the open-close valve V5. the carrier gas introduction port 80 enters the clearances
The purging pressure of the Ar gas source 66 is set to 6 to between the vaporizing disks 120 through the passage (not
9 kgf/cm2. shown), the annular groove 130 and the carrier gas passing
That portion of the supply pipe line 22 which is located 25 holes 120*-1» the clearances of the between the vaporiizng
between the vaporizing means 26 and the process device 16 disks I2*- a pressure drop occurs because of the carrier gas.
is entirely wound by a gas heater 70 consisting of e.g. a tape whereby the liquid material 18 is vaporized as a result of the
heater, as is indicated by the broken lines in FIG. 1. The Joule-Thomson effect. The vaporized material 18. which
heating temperature of the gas heater 70 is set to a constant serves as the process gas, passes exhaustion passages 115
value falling within a range of 30° to 90° C, e.g. 60° C, at and 116 together with the carrier gas, reaches a downstream
which temperature vaporized DMAH is neither returned to portion of the supply pipe line 22 through the process gas
the liquid state, nor thermally decomposed. To prevent exhaustion port 82. and enters the process device 16.
solidification of DMAH which is to be discharged through The operation of the apparatus constructed as above will
the trap pipe 52, that portion of the trap pipe 52 which is 35 now be described.
located upstream of the trap unit 54 is entirely wound by a First, where the open-close valve V6 of the supply pipe
first heater 72 consisting of e.g. a tape heater, as is indicated line 22 and the open-close valve V18 of the chamber
by the broken lines in FIG; 1. The hearing temperature of the pressure adjustment pipe 48. which are incorporated in the
heater 72 is set to e.g. 45° C. In addition, to preheat a carrier process gas supply apparatus 14, are closed, a semiconduc
gas flowing through the carrier gas pipe 44 so as to accel- ^ tor wafer W to be treated is transferred to the process
erate vaporization of the liquid material 18, a downstream container 90 and mounted onto the mount table 94.
portion of the carrier gas pipe 44 is entire wound by a second Subsequently, the pressure in the process container 90 is
heater 74 consisting of e.g. a tape heater, as is indicated by reduced to a base negative value, and the wafer W is heated
the broken lines in FIG. 1. The heating temperature of the by the resistive heater 92 to a predetermined temperature
heater 74 is set to e.g. 35° C. 45 falling within a process temperature range (for example.
The liquid flow control means 42, the vaporizing means 160° to 300° C), e.g. 200°.
26, the mass-flow controllers 46 and 50 and valves VI to Then, to minimize the range of changes in supply amount
V20 (except for the valves V2 and V3) are controlled by a of the process gas due to changes in pressure in the process
microcomputer 160. A carrier gas of an amount sufficient to container 90, the open-close valves V17 and V18 arranged
vaporize the liquid material 18 is supplied at all times to the 50 across the chamber pressure adjustment pipe 48 are opened
vaporizing means 26. before the process gas is supplied into the process container
FIG. 2 shows the structure of the vaporizing means 26. As 99, thereby supplying the process container 90 with H2 gas is shown in FIG. 2. the means 26 has a liquid introduction from the shower head 98 via the chamber pressure adjustport 78 for introducing the liquid material (DMAH) 18 ment pipe 48. As a result, the pressure in the process supplied through the supply pipe line 22, a carrier gas 55 container 90 is set to a predetermined value, e.g. about 2 introduction port 80 for introducing H2 as the carrier gas Torr. falling within a process pressure range (0.1 to 20 Torr). supplied through the gas pipe 44, and a process gas exhaus- After setting the pressure in the process container 90, the tion port 82. The main body of the vaporizing means 26 open-close valves VI and V10 arranged across the forceincludes a vaporizing section 140 with 101 vaporizing disks feedpipe 30, the open-close valve V2 of the gas introduction 120 arranged adjacent to each other, passages 110,112,113 60 pipe 28, the open-close valve V3 of the liquid introduction and 114 for guiding, to the vaporizing section 140. the liquid pipe 34, and the open-close valves Vll. V4 and V5 arranged material 18 introduced into the vaporizing means 26 through across the supply pipe line 22 are opened. At the same time, the liquid introduction port 78, a valve mechanism 111 the valves V14 and V15 arranged across the carrier gas pipe interposed between the passages 110, 112, 113 and 114 44 are opened. In this state, Ar gas pressurized to 1 to 3 (between the passages 110 and 112 in this embodiment), a 65 kgf/cm2 is guided from the Ar gas cylinder 38 to the liquid passage (not shown) for guiding, to the vaporizing section material container 20 via the force-feed pipe 30. By virtue 140, the carrier gas introduced into the vaporizing means 26 of the pressurized Ar gas, the liquid material 18 contained in