A method of manufacturing a semiconductor wafer, the method including: providing a base wafer including a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of the metal layers, wherein the monocrystalline layer includes second alignment marks;...http://www.google.com/patents/US8058137?utm_source=gb-gplus-sharePatent US8058137 - Method for fabrication of a semiconductor device and structure
Method for fabrication of a semiconductor device and structure
3 O 302 306 304 308-1 30 -3 3(?8-2 30/3-4 312 4 / /3104 I I I I Y ' I /310-2 Select I I I I '-°g'° '—°I /3103 I I I I 310-4 I I I l / \312-1 /“318 =_ : = =/-314 316\ _ _ _ _ _ - _ _ X Select Logic
Fig. 3A
I 111
I F1
~I§i1iI‘iI/
300B 308-4B1 \ 318-131 I I I .\|\\?312-413 I I I -.-\L\312-313 I I I I I I I /..----308-4B2 /3188
X Select Logic
Fig. 3B
300 320 / / Fig 4A 402 '\ Nodh 406 \ West <$> East South 404 \
408 410 412 Fig 4B
sgz 304 50g @—>@ @ FIG 5A 512 / 514 51\5 \ 0 D0 D0 0 \ 510 FIG 5B 524-1 \I/528-1 522 I 526 \ 0 0 > \528-2 \ 520 524 / \ \ 528-3 524-3 FIG 5C 532-1 \ O 536 / 532-2 \ O_‘ D S Q __O 532'?’ — E \ 534 532-4 \ : CK R 532-5 \ \ 530
600 / 604 608-1 \ \/9-D 604-5 ->|< >|< i >|< X i \ -X X X X X X -an X >1 x X X _l— 606 -X X X X X X I / -x X x x x x ’ -X X X X X -X X X X X X I 2 <1 * ’F L / vss 602-6 / 602-7 602-1\C 602-2\C 602-4\0