A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask...http://www.google.com/patents/US6097052?utm_source=gb-gplus-sharePatent US6097052 - Semiconductor device and a method of manufacturing thereof
Semiconductor device and a method of manufacturing thereof
