A complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same are disclosed. The complementary field effect element includes a high concentration impurity layer...http://www.google.com/patents/US5478761?utm_source=gb-gplus-sharePatent US5478761 - Method of producing semiconductor device having first and second type field effect transistors
Method of producing semiconductor device having first and second type field ...
