Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain...http://www.google.com/patents/US7510920?utm_source=gb-gplus-sharePatent US7510920 - Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film
Manufacturing method for a thin film transistor that uses a pulse ...
