1. A method of processing crystal quartz material comprising the steps of,
- maintaining the quartz at thermal equilibrium at a temperature of 500.degree.C to 570.degree.C in an atmosphere substantially free of hydrogen, while
- applying an electric field along theh Z-axis of the crystal quartz between anode and cathode electrodes of a strength from 1 to 5 kV/cm for a period of 72 to 120 hours, and
- maintaining said electric field while said crystal is cooled.
2. The method of claim 1 wherein said temperature equilibrium is 550.degree.C and said electric field is 2 kV/cm.
3. The method of claim 1 further comprising the subsequent step of,
- removing from 10 to 40 thousandths of an inch of the crystal perpendicular to the Z axis from the surface adjacent to said cathode electrode, and then
- repeating the steps of claim 1.
4. The method of claim 3 further comprising the subsequent step of,
- removing from 10 to 40 thousandths of an inch of the crystal perpendicular to the Z-axis from the surface adjacent to said cathode electrode, and then
- repeating the steps of claim 1.
5. The method of claim 1 wherein the atmosphere is a dry gas selected from the group consisting of helium neon, argon and nitrogen.
6. The method of claim 1 wherein said crystal quartz is natural quartz.
7. The method of claim 1 wherein said crystal quartz is synthetic quartz.
8. The method of claim 7 wherein said synthetic quartz is of homogeneous Z-growth material.
9. The method of claim 1 further comprising the step of
- subjecting the crystal quartz to ionizing radiation of 10.sup.5 to 10.sup.6 rad simultaneously to said step of applying an electric field to said crystal quartz.
10. A method of processing crystal quartz material comprising the steps of
- maintaining the quartz at thermal equilibrium in the beta phase at a temperature of 700.degree. to 900.degree.C in an atmosphere substantially free of hydrogen while
- applying an electric field between anode and cathode electrodes along the Z-axis of the crystal quartz of a strength from 1 to 5 kV/cm for a period of 6 to 12 hours, and
- cooling said quartz while maintaining said electric field and applying a compression stress which induces a strain no less than 10.sup.-.sup.4 in the X direction of said crystal as the quartz cools from the beta phase through 573.degree.C to the alpha phase.
11. The method of claim 10 wherein said thermal equilibrium temperature is 800.degree.C and wherein said electric field strength is 2 kV/cm.
12. A method of processing crystal quartz material comprising the steps of
- maintaining the quartz at thermal equilibrium in the beta phase at a temperature of 700.degree. to 900.degree.C in an atmosphere substantially free of hydrogen, while
- applying an electric field between anode and cathode electrodes along the Z axis of the crystal quartz of a strength from 1 to 5 kV/cm for a period of 6 to 12 hours, and
- cooling said quartz while maintaining said electric field along the Z axis and applying an electric field along the X axis sufficient to create a strain no less than 10.sup.-.sup.4 as the quartz cools from the beta phase through 573.degree.C to the alpha phase.
13. The method of claim 1 wherein said electrodes are thin platinum sheets of 99.9 to 99.99% purity.
14. A quartz crystal for use in a crystal resonator comprising a quartz crystal which has been treated by the steps of,
- maintaining the quartz at thermal equilibrium at a temperature of 500.degree.C to 570.degree.C in an atmosphere substantially free of hydrogen, while
- applying an electric field between anode and cathode electrodes along the Z axis of the crystal quartz of a strength from 1 to 5 kV/cm for a period of 72 to 120 hours, and
- maintaining said electric field while said crystal is cooled.
