Method of making miniature high frequency SC-cut quartz crystal resonators

1. Method of making miniature high frequency SC-cut quartz crystal resonators that are free of etch channels and etch pits and that exhibit high Q and that are free of process and material defect induced nonlinearities from a plano-plano SC-cut quartz crystal wafer, said method including in the following order the steps of:

(A) chemically polishing the wafer

(B) chemomechanically polishing the chemically polished wafer

(C) chemically polishing the chemomechanically polished wafer

(D) depositing a suitable pattern of an etch resist on the wafer using standard photolithographic techniques

(E) chemically polishing the wafer

(F) stripping the photoresist from the wafer

(G) placing a suitable evaporation mask pattern into intimate contact with the wafer

(H) depositing metallic film electrodes onto the wafer

(I) testing the resonators so formed on the wafer

(J) selectively separating those resonators having the desired properties,

(K) mounting the selected resonators into an enclosure,

(L) adjusting the frequencies of the resonators, and

(M) hermetically sealing the enclosure.

2. Method according to claim 1 wherein the frequencies of the resonators are adjusted after hermetically sealing the enclosure.

3. Method according to claim 1 wherein the wafer is chemically polished in a 4:1 solution of NH.sub.4 F/HF.

4. Method of making miniature high frequency SC-cut quartz crystal resonators that are free of etch channels and etch pits and that exhibit high Q and that are free of process and material defect induced nonlinearities from a plano-plano SC-cut quartz crystal wafer 25 mm.times.25 mm in area, 100 .mu.m in thickness and having a surface finish of 1 .mu.m, said method including the steps of:

(A) chemically polishing the wafer with a 4:1 solution of NH.sub.4 F/HF to a thickness of about 75 .mu.m

(B) chemomechanically polishing the chemically polished wafer with a colloidal silica polishing compound and flat polyurethane polishing pads to a thickness of about 70 .mu.m

(C) chemically polishing the wafer to a thickness of about 68 .mu.m

(D) depositing a pattern in the form of a square grid of square apertures in which each aperture of the grid measures about 1.4 mm on a side and in which each aperture of the grid is spaced from adjacent apertures of the grid by a distance about 2.8 mm on both sides of the wafer using standard double sided photolithographic techniques

(E) immersing the wafer in the chemical polishing solution to chemically polish the exposed aperture portions of the quartz to a thickness of about 18 .mu.m thereby forming an array of inverted mesa resonators

(F) stripping the photoresist from both sides of the wafer

(G) placing a suitable evaporation mask in the form of a square grid with keyhole shaped apertures in intimate contact with the wafer, the centers of the circular portions of the keyhole patterns being registered to be in the center of the etched inverted mesas, the corresponding tab portions of the keyhole pattern on the tabs and bottom of the wafer being directed to be 180.degree. apart so that the top and bottom circular portions of the keyhole pattern represent the only regions of overlap of each aperture, each of the circular overlapping portions of the keyhole pattern being of about 0.58 mm in diameter, and the tab widths in each case being about 0.5 mm

(H) depositing an aluminum film of about 500 angstroms in thickness on both sides of the inverted mesas

(I) testing the resonators so formed on the wafer

(J) selectively separating those resonators having the desired properties

(K) mounting the selected resonators into an enclosure

(L) adjusting the frequency of the selected resonators to the exact frequency desired by laser trimming, and

(M) hermetically sealing the enclosure.