A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer includes a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces. The SAF layer also includes a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween. The SAF layer further includes a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer. The second ferromagnetic layer is of adequate thickness... |
Citations|
| US6094325 | Jul 7, 1998 | Jul 25, 2000 | Fujitsu Limited | Spin valve head reducing barkhausen noise | | US6108176 | Jan 20, 1998 | Aug 22, 2000 | Fujitsu Limited | Magnetic head having increased electrode height and increased SVE-electrode contact area for reducing head noise and magnetic storage device having same | | US6178072 | Nov 9, 1998 | Jan 23, 2001 | International Business Machines Corporation | Keeper layer without sense current shunting in a giant magnetoresistive (GMR) head | | US6204071 | Sep 30, 1999 | Mar 20, 2001 | Headway Technologies, Inc. | Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration | | US6219207 | Apr 26, 1999 | Apr 17, 2001 | International Business Machines Corporation | Read sensor having high conductivity multilayer lead structure with a molybdenum layer | | US6221518 | Apr 13, 1999 | Apr 24, 2001 | TDK Corporation | Magnetoresistance effect film and magnetoresistance effect type head | | US6222707 | Dec 28, 1998 | Apr 24, 2001 | Read-Rite Corporation | Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer | | US6249406 | Sep 23, 1996 | Jun 19, 2001 | International Business Machines Corporation | Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction | | US6266218 | Oct 28, 1999 | Jul 24, 2001 | International Business Machines Corporation | Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing | | US6315839 | Oct 21, 1998 | Nov 13, 2001 | International Business Machines Corporation | Method of making a keeper layer for a spin valve sensor with low intrinsic anisotropy field | | US6330128 | Apr 26, 1999 | Dec 11, 2001 | International Business Machines Corporation | Magnetic head assembly having open yoke write head with highly defined narrow track width | | US6430015 | Feb 2, 2001 | Aug 6, 2002 | Headway Technologies, Inc. | Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration | | US6462919 | Nov 18, 1999 | Oct 8, 2002 | Seagate Technology LLC | Spin valve sensor with exchange tabs | | US6501627 | Nov 26, 2001 | Dec 31, 2002 | Fujitsu Limited | Spin-valve magnetoresistive head, and composite-type magnetic head and magnetic recording medium drive using the same | | US6570745 | Nov 20, 2000 | May 27, 2003 | International Business Machines Corporation | Lead overlaid type of sensor with sensor passive regions pinned | | US20010003862 | Feb 23, 1999 | | | METHOD OF MAKING A PATTERNED MAGNETIC RECORDING HEAD | | US20010004306 | Jan 24, 2001 | | | Read head having high resistance soft magnetic flux guide layer for enhancing read sensor efficiency | | US20010048578 | May 10, 2001 | | TDK CORPORATION | Thin-film magnetic head and method of manufacturing same | | US20030133233 | Jan 15, 2002 | | | Anti-parallel coupled free layer for a GMR sensor for a magnetic head |
Referenced by|
| US6933042 | Jul 30, 2003 | Aug 23, 2005 | Hitachi Global Storage Technologies Netherlands B.V. | Ballistic GMR structure using nanoconstruction in self pinned layers | | US6982855 | May 12, 2003 | Jan 3, 2006 | TDK Corporation | Magnetoresistive head having layer structure between free and lead layers with layer structure including fixed magnetization layer | | US7023670 | Nov 18, 2002 | Apr 4, 2006 | Alps Electric Co., Ltd. | Magnetic sensing element with in-stack biasing using ferromagnetic sublayers | | US7075759 | Sep 20, 2002 | Jul 11, 2006 | Alps Electric Co., Ltd. | Magnetic sensing element with free layer biasing using varying thickness nonmagnetic coupling layer | | US7116534 | Jul 2, 2003 | Oct 3, 2006 | Hitachi Global Storage Technologies Japan, Ltd. | Magnetoresistive head | | US7206175 | Feb 24, 2004 | Apr 17, 2007 | Hitachi Global Storage Technologies Japan, Ltd. | Magnetoresistive head having defined relationships between the tract width and magnetization film thickness product to permit no hysteresis in the transfer curve | | US7266012 | Mar 13, 2006 | Sep 4, 2007 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element and magnetic memory | | US7495868 | Jul 12, 2005 | Feb 24, 2009 | Alps Electric Co., Ltd. | Exchange coupling film and magnetic sensing element including the same | | US7652855 | Nov 9, 2006 | Jan 26, 2010 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic sensor with extended free layer and overlaid leads | | US7876535 | Jan 24, 2008 | Jan 25, 2011 | TDK Corporation | Magnetoresistive device of the CPP type, and magnetic disk system | | US7894174 | Mar 17, 2008 | Feb 22, 2011 | Monolithic Power Systems, Inc. | Method and apparatus for fault detection scheme for cold cathode fluorescent lamp (CCFL) integrated circuits | | US8063570 | Jul 1, 2008 | Nov 22, 2011 | Monolithic Power Systems, Inc. | Simple protection circuit and adaptive frequency sweeping method for CCFL inverter |
Claims1. A magnetic sensor, comprising a synthetic antiferromagnetic layer having first and second wing regions and an active region therebetween, wherein the synthetic antiferromagnetic layer includes: - a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces;
- a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween; and
- a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer, wherein the second ferromagnetic layer is of adequate thickness such that the magnetic susceptibility of the first and second wing region portions of the first ferromagnetic layer is substantially zero when magnetic signal fields are present only in the first and second wing regions,
- wherein the first ferromagnetic layer includes a second surface opposite the first surface and wherein the first ferromagnetic layer is a layer of a giant magnetoresistive tri-layer, the giant magnetoresistive tri-layer further comprising:
- a second non-magnetic metal layer including copper and having first and second opposing surfaces, wherein the first surface of the second non-magnetic metal layer is adjacent the second surface of the first ferromagnetic layer; and
- a third ferromagnetic layer having first and second opposing surfaces, wherein the first surface of the third ferromagnetic layer is adjacent the second surface of the second non-magnetic metal layer, and including a material selected from the group of nickel-iron, cobalt-iron and nickel-iron-cobalt, and
- wherein the magnetic sensor further includes a third non-magnetic metal layer having a first and second opposing surfaces, wherein the first surface is adjacent the second surface of the third ferromagnetic layer.
2. The sensor of claim 1, wherein the non-magnetic metal layer includes a metal selected from the group consisting of ruthenium and rhodium. 3. The sensor of claim 2, wherein the first ferromagnetic layer includes a material selected from the group of nickel-iron, cobalt-iron and nickel-iron-cobalt. 4. The sensor of claim 3, wherein the second ferromagnetic layer includes cobalt-iron. 5. The sensor of claim 1, further comprising: - a first lead patterned on the first wing region portion of the second ferromagnetic layer; and
- a second lead patterned on the second wing region portion of the second ferromagnetic layer.
6. The sensor of claim 5, wherein the first and second leads are recessed. 7. The sensor of claim 1, wherein the third non-magnetic metal layer includes a material selected from the group consisting of ruthenium and rhodium. 8. The sensor of claim 7, further comprising: - a fourth ferromagnetic layer having first and second opposing surfaces, wherein the first surface of the fourth ferromagnetic layer is adjacent the second surface of the third non-magnetic metal layer; and
- an antiferromagnetic layer adjacent the second surface of the fourth ferromagnetic layer.
9. The sensor of claim 1, further comprising: - an antiferromagnetic layer portion patterned on the first wing region portion of the second ferromagnetic layer; and
- a lead patterned on the antiferromagnetic layer portion.
10. The sensor of claim 9, wherein the antiferromagnetic layer portion is recessed. 11. The sensor of claim 10, wherein the lead is recessed. 12. The sensor of claim 1, further comprising: - an antiferromagnetic layer portion having first and second opposing surfaces, wherein the first surface of the antiferromagnetic layer portion is adjacent the first wing region portion of the second ferromagnetic layer; and
- a lead having a first portion adjacent the first wing region portion of the second ferromagnetic layer.
13. The sensor of claim 12, wherein the lead includes a second portion adjacent the second surface of the antiferromagnetic layer. |