Method of fabricating a multi-color light emissive display

1. A method of fabricating a multi-color flat panel display, comprising:

forming a first sacrificial layer on the substrate;

providing a plurality of first openings in the first sacrificial layer to the substrate;

depositing a first semiconductor phosphor material on the substrate to cover the first sacrificial layer and the substrate through the plurality of first openings;

removing the first sacrificial layer and the first semiconductor phosphor material covering the first sacrificial layer to leave a plurality of first active elements of the first semiconductor phosphor material on the substrate at positions corresponding to the plurality of first openings;

forming a second sacrificial layer on the substrate and the plurality of first active elements;

providing a plurality of second openings in the second sacrificial layer to the substrate, each of the plurality of second openings being adjacent to a corresponding one of the plurality of first active elements;

depositing a second semiconductor phosphor material on the substrate to cover the second sacrificial layer and the substrate through the plurality of second openings;

removing the second sacrificial layer and the second semiconductor phosphor material covering the second sacrificial layer to leave a plurality of second active elements of the second semiconductor phosphor material on the substrate at positions corresponding to the plurality of second openings; and

depositing transparent electrodes on the plurality of first active elements and the plurality of second active elements.

2. The method of claim 1 wherein each of the first and second semiconductor phosphor materials is deposited by one of molecular beam epitaxy, metalorganic chemical vapor deposition, organometallic vapor phase epitaxy, hydride vapor phase epitaxy, chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, laser ablation, screen printing, spin-on deposition, and dip-coating techniques.

3. The method of claim 1 wherein the step of removing the first sacrificial layer includes wetting the first sacrificial layer with a liquid effective for dissolving the first sacrificial layer.

4. The method of claim 3 wherein the liquid is a hydrofluoric acid solution.

5. The method of claim 1 wherein the step of removing the second sacrificial layer includes wetting the second sacrificial layer with a liquid effective for dissolving the second sacrificial layer.

6. The method of claim 5 wherein the liquid is a hydrofluoric acid solution.

7. The method of claim 1 wherein the first plurality of active elements are arranged in a first matrix array and the plurality of second active elements are arranged in a second matrix array interleaved with the first matrix array.

8. The method of claim 1 wherein the first and the second sacrificial layers are selected from the group consisting of silicon dioxide, silicon nitride, aluminum, and high temperature photoresist.

9. The method of claim 1 wherein the first and the second sacrificial layers are formed of a spin-on-glass.

10. The method of claim 1 wherein the first and second sacrificial layers are formed by one of sol-gel application, spin-on application, dip-on deposition, and vapor deposition.

11. The method of claim 1 wherein the step of providing the first plurality of openings includes:

applying a photoresist layer to the first sacrificial layer;

patterning the photoresist layer by one of photolithography, a stencil mask deposition and ion beam lithography; and

exposing the patterned photoresist layer to an etchant to form the first plurality of openings.

12. The method of claim 1 wherein the step of providing the second plurality of openings includes:

applying a photoresist layer to the second sacrificial layer;

patterning the photoresist layer by one of photolithography, a stencil mask deposition and ion beam lithography; and

exposing the patterned photoresist layer to an etchant to form the second plurality of openings.

13. The method of claim 1 wherein each of the first and the second semiconductor phosphor materials is capable of emitting light by electroluminescence.

14. The method of claim 1 wherein the first and second sacrificial layers are formed from a material selected from the group consisting of silicon dioxide, silicon nitride, aluminum, and high temperature photoresist.

15. The method of claim 1 wherein the first and second sacrificial layers do not release gases when heated to a temperatures exceeding about 600 C.

16. The method of claim 1 further comprising:

forming a third sacrificial layer on the substrate, the plurality of first active elements, and the plurality of second active elements;

providing a plurality of third openings in the third sacrificial layer to the substrate, each of the plurality of third openings being adjacent to corresponding ones of the plurality of first active elements and the plurality of second active elements;

depositing a third semiconductor phosphor material on the substrate to cover the third sacrificial layer and the substrate through the plurality of third openings;

removing the third sacrificial layer and the third semiconductor phosphor material covering the third sacrificial layer to leave a plurality of third active elements of the third semiconductor phosphor material on the substrate at positions corresponding to the plurality of third openings; and

depositing transparent electrodes on the plurality of third active elements.

17. The method of claim 16 wherein the first plurality of active elements are arranged in a first matrix array, the plurality of second active elements are arranged in a second matrix array interleaved with the first matrix array, and the third plurality of active elements are arranged in a third matrix array interleaved with the first and second matrix arrays.