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Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Packaging: Tube ; Brand: Nexperia ; Product Type: MOSFET.
[1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5mins. [3] Continuous current is limited by package.
BUK652R1-30C,127 ; Gate Charge (Qg) (Max) @ Vgs. 168 nC @ 10 V ; Vgs (Max). ±16V ; Input Capacitance (Ciss) (Max) @ Vds. 10918 pF @ 25 V ; FET Feature. - ; Power ...
The BUK652R1-30C,127 is a high-performance, PowerMOS transistor designed and manufactured by NXP Semiconductors. This advanced technology has been engineered to ...
US $5.85 ; Color : BUK6507-55C ; Delivery. Shipping: US $3.21. Estimated delivery between Mar 08 - 14 ; Service Free returns | Buyer protection ; Free returns | ...
ON Semiconductor BUK652R1-30C is IC REG LINEAR 5V 100MA TO92-3. Star River Electronics services the golbal buyers with Fast deliver & Higher quality ...
BUK652R1-30C from www.aliexpress.com
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US $6.50 ; Color : BUK6507-55C ; Service Free returns | Delivery guarantee | Buyer protection ; Delivery guarantee · Buyer protection ; Payment methods. Security ...
Product, VB Package, VDS(V), VGS, Vthyp(V), ID(A), Technology. BUK652R1-30C, TO220, 30V, 20(±V), 1.7V, 140A. Similar type recommendation.
BUK652R1-30C MOSFET. Datasheet pdf. Equivalent. Type Designator: BUK652R1-30C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...
The BUK652R1-30C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This ...