The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching ...
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GaN Systems GS61004B 100V Enhancement Mode GaN Transistor is ideal for 48V DC-DC conversions, AC-DC (secondary side synch. rectification), VHF very small form- ...
The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine ...
$9.99 2-day delivery 30-day returns
GaN Systems GS61004B 100V Enhancement Mode GaN Transistor is ideal for 48V DC-DC conversions, AC-DC (secondary side synch. rectification), VHF very small form- ...
The GS61004B is a bottom- cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features ...
The GS61004B-MR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency.
$369.75 $15.95 delivery Out of stock
The GS61004B-EVBCD evaluation board allows the user to evaluate GaN Systems' GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the ...
$15.95 delivery
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching ...
GS61004B-MR Datasheet(PDF) - GaN Systems Inc. - Alldatasheet.com
www.alldatasheet.com › datasheet-pdf
Features • 100V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 15 mΩ • IDS(max) = 45 A • Ultra-low FOM Island Technology® die
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GaN Systems GS61004B-EVBCD Power Management Development Boards and Kits. 100V GaN E-HEMT Full Bridge Evaluation Board. Download Datasheet.