Part #: GT10Q101. Download. File Size: 179Kbytes. Page: 6 Pages. Description: Silicon N Channel IGBT High Power Switching Applications.
Part #: GT10Q101. Download. File Size: 297Kbytes. Page: 6 Pages. Description: High Power Switching Applications. Manufacturer: Toshiba Semiconductor.
Download GT10Q101 Datasheet PDF Toshiba document. Part Number: GT10Q101 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet ...
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TOSHIBA GT10Q101 / GT10Q101 (BRAND NEW) ; Item Number. 394055891980 ; MPN. GT10Q101 ; Brand. TOSHIBA ; Accurate description. 4.9 ; Reasonable shipping cost. 4.7.
GT10Q101 Specifications: Transistor Type: IGBT ; DC Collector Current: 10A ; Collector Emitter Voltage Vces: 2.7V ; Power Dissipation Pd: 140W ; Collector ...
GT10Q101. 2006-10-31. 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT10Q101. High Power Switching Applications. • Third-generation ...
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • •... Features, 0 ...
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications · GT10Q101 datasheet pdf TOSHIBA Download GT10Q101 datasheet from
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GT10Q101 Semiconductors from TOSHIBA In Stock, Order Now! Same Day Shipping, 2-Year Warranty - , TRANSISTOR, IGBT, 1200 V, 1 A, 19 X 4.8 MM, THROUGH HOLE, ...