IRL2910SPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC datasheet, inventory, & pricing.
Order today, ships today. IRL2910SPBF – N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK from Infineon Technologies.
Apr 19, 2004 · Parameter. Max. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10VЕ. 55. ID @ TC = 100°C. Continuous Drain Current, VGS @ 10VЕ.
Type of transistor. N-MOSFET ; Technology. HEXFET® ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 55A.
The IRL2910SPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance ...
IRL2910SPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC datasheet, inventory & pricing.
In stock
5PCS MOSFET Transistor IR TO-263 ( D2PAK ) IRL2910S IRL2910SPBF L2910S ; Quantity. 1 sold. More than 10 available ; Item Number. 166153113857 ; Brand. IR ; UPC.
HEXFET® Power MOSFET. Logic-Level Gate Drive; surface mount; Advanced Process Technology; ultra low on resistance; Dynamic dv/dt Rating; Fast Switching ...
$10.34
it can be used as a replacement for your old or broken one. ✨ Practical use: the rohs electronic components are made of high-quality materials, which are very ...
IRL2910SPBF · IRF-IRL2910SPBF Datasheet 689Kb / 11P, HEXFET짰 Power MOSFET. IRL2910SPBF · IRF-IRL2910SPBF Datasheet 690Kb / 11P, ADVANCED PROCESS TECHNOLOGY.