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IRS2011SPBF ; Input Type. Inverting ; High Side Voltage - Max (Bootstrap). 200 V ; Rise / Fall Time (Typ). 25ns, 15ns ; Operating Temperature. -40°C ~ 150°C (TJ).
Oct 28, 2015 · Floating channel designed for bootstrap operation. •. Fully operational to 200V. •. Tolerant to negative transient voltage, dV/dt immune.
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IRS2011SPBF Infineon Technologies Gate Drivers 200V high & low-side,1A,60ns,DSO-8 datasheet, inventory, & pricing.
$0.47 to $22.35 In stock
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Features. • Floating channel designed for bootstrap operation. Fully operational up to +200V. Tolerant to negative transient voltage, dV/dt immune.
IRS2011SPBF by Infineon Technologies AG - Arrow Electronics
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Infineon Technologies AGIRS2011SPBFGate and Power Drivers ; Part Status, Obsolete ; HTS, 8542.39.00.01 ; Automotive, No ; PPAP, No ; Driver Type, High and Low Side.
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The IRS2011SPBF is a high power high speed power MOSFET high and low Side Driver with independent high and low-side referenced output channels. Logic inputs are ...
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The Infineon Technologies IRS2011SPBF is a high-performance half-bridge driver IC designed for use in a variety of electronic applications. With two independent ...
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The IRS2011 is a high power, high speed power MOSFET driver with independent high- and low-side referenced output channels, ideal for Audio Class D and ...
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Description, symbols of product · IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 · Manufacturer part number: IRS2011SPBF · TME Symbol: IRS2011SPBF ...