Find information for part IXFR200N10P from the Polar™ Series N Channel HiPerFETs, or search for Power Semiconductors and more Discrete MOSFETs from ...
$13.91
Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 133 A ; Rds On - Drain-Source Resistance: 9 mOhms ; Vgs - Gate-Source ...
In stock
Order today, ships today. IXFR200N10P – N-Channel 100 V 133A (Tc) 300W (Tc) Through Hole ISOPLUS247™ from IXYS. Pricing and Availability on millions of ...
IXFR200N10P. N-Channel Enhancement Mode. Avalanche Rated. V. DSS. = 100V. I. D25. = 120A. R. DS(on). < 9m . DS99238F(02/17). Features. ○ Silicon chip on ...
IXFR200N10PIXYS ; Type of transistor. N-MOSFET ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 120A ; Power dissipation. 300W.
Part #: IXFR200N10P. Download. File Size: 561Kbytes. Page: 5 Pages. Description: PolarTM HiPerFET Power MOSFET. Manufacturer: IXYS Corporation.
€11.81
The IXFR200N10P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ...
€17.20
Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated features. Silicon chip on Direct-Copper Bond (DCB) Substrates
$12.70
Nov 19, 2023 · Single N-Channel 100V 300W 235NC Through Hole Power Mosfet - ISOPLUS247. Documentation: IXFR200N10P Datasheet PDF (5 Pages).