Mar 31, 2016 · Innodisk is going to process Samsung DDR3 4Gb 512Mx8 D-Die base density product termination and running change to.

DIMM, DDR3, 8 GB, 512Mx8, [1066 | 1333 | -], [1.35V | 1.50V]

M3UW8GSSGL0CE, 0, 2, 2, 5,277. M3UW8GSSGLN9E, 0, 1, 1, 1,666. M3UW8GSSGLN9D, 0, 1, 1, 1,666. M3UW8GSSGLM7D, 0, 1, 1, 1,666. M3UW8GSSGCM7D, 0, 1, 1, 1,665.

기타 부품 ; M3UW8GSSGL0CE, 0, 2, 2, 5,277 ; M3UW8GSSGL0CD, 0, 2, 2, 3,226.

M3UW-2GHJBC0C-E writing text M3UW-2GHJBCM7-E M3UW-2GHJBCN9-E M3UW-2GHJBL0C-E ... M3UW-8GSSGL0C-D M3UW-8GSSGLN9-D M471B1G73QH0-YK0 M4C0-4GSSLCRG M4C0-8GSSMCRG