Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be.
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This device is designed for use with general-purpose amplifiers and switches requiring collector currents to. 500 mA. Sourced from process 63. Page 3. PN290. 7 ...
Epitaxial Planar Die Construction. •. Ideal for Low Power Amplification and Switching. •. Complementary NPN Type: MMBT2222A.
This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. Waiting.
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MMBT2907 / MMBT2907A. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group.