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PMD10K80 ; Transistor Type. NPN - Darlington ; Current - Collector (Ic) (Max). 12 A ; Voltage - Collector Emitter Breakdown (Max). 80 V ; Vce Saturation (Max) @ Ib, ...
PMD10K80 Datasheet PDF - New Jersey Semi-Conductor Products, Inc. Part #, PMD10K80. Download, PMD10K80 Click to download. File Size, 74.63 Kbytes. Page, 2 Pages.
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PMD10K80. Manufacturer: SOLID STATE. Newark Part No.: 07R8803. Transistor Polarity: NPN. Collector Emitter Voltage V(br)ceo: 80V. Collector Emitter Voltage Max ...
$75.00
PMD10K80 DARLINGTON TRANSISTOR NPN 80V 12A TO3. Polarity: NPN. Material of transistor: Si. Forward current transfer ratio (hFE), min: 10000.
PMD10K80. DESCRIPTION. • High DC current gain. • Collector-Emitter Sustaining Voltage-. VCEO(SUS)= SOV(Min). • Complement to type PMD11K80. APPLICATIONS.
$9.99
PMD10K80 Lambda Silicon NPN Darlingtion Power Transistor TO-3 - NOS Qty 1 ; Quantity. 1 sold. 5 available ; Item Number. 133011069326 ; Brand. Lambda ; Model.
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Transistor, NPN. Max voltage: 80V. Max current: 12Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: PMD10K80. Operating temperature:-65 to 200 Deg C.
Size:199K inchange semiconductor pmd10k80.pdf · PMD10K80. INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ...
PMD10K80, 100. IC = 6 Adc; VCE = 3 Vdc. T₁ = 25°C. 1000. 20,000. PMD11K80, 100. 800. 20,000. OFF CHARACTERISTICS. Forward Bias Secondary. Is/b. VCE = 30 Vdc; TA ...