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Si8466EDB-T2-E1. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) ... t2. Notes: PDM. 1. Duty cycle, D = 2. Per unit base = RthJA = 100 °C/W. 3. TJM ...
SI8466EDB-T2-E1 from www.digikey.com
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Order today, ships today. SI8466EDB-T2-E1 – N-Channel 8 V 3.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot from Vishay Siliconix.
SI8466EDB-T2-E1 from www.mouser.com
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SI8466EDB-T2-E1 Vishay Semiconductors MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1 datasheet, inventory, & pricing.
$7.50 1–7 day delivery 30-day returns
SI8466EDB-T2-E1 ; Transistor Polarity, N-Channel ; Number of Channels, 1 Channel ; Vds - Drain-Source Breakdown Voltage, 8 V ; Id - Continuous Drain Current, 5.4 A.
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Buy SI8466EDB-T2-E1 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
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Buy Vishay SI8466EDB-T2-E1 in Reel. N-CHANNEL 8-V (D-S) MOSFET from Future Electronics.
SI8466EDB-T2-E1 from www.digikey.com
$4.99 1–4 day delivery 30-day returns
Order today, ships today. SI8416DB-T2-E1 – N-Channel 8 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1) from Vishay Siliconix.
Details, datasheet, quote on part number: SI8466EDB-T2-E1 ; Product Category, MOSFET ; Transistor Polarity, N-Channel ; Drain-Source Breakdown Voltage, 8 V ; Gate- ...
Specifications of SI8466EDB-T2-E1: Vgs(th) (Max) @ Id700mV @ 250µA: Vgs (Max)±5V: TechnologyMOSFET (Metal Oxide): Supplier Device Package4-Microfoot ...
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VISHAY SI8466EDB-T2-E1 | Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W - This product is available in Transfer Multisort Elektronik.