SQ1420EEH-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. 60. V. Gate-Source ...
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SQ1420EEH-T1-GE3 ; Gate Charge (Qg) (Max) @ Vgs. 4 nC @ 4.5 V ; Input Capacitance (Ciss) (Max) @ Vds. 215 pF @ 25 V ; FET Feature. - ; Mounting Type. Surface Mount.
These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages ...
These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages ...
MOSFET, N CH, ESD, 60V, 1.6A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance ...
SQ1420EEH-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. 60. V. Gate-Source ...
SQ1420EEH-T1-GE3 ; Current - Continuous Drain (Id) @ 25°C : 1.6A (Tc) ; Drain to Source Voltage (Vdss) : 60V ; Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V.
Manufacturer, Electro-Films (EFI) / Vishay. Description, MOSFET N-CH 60V 1.6A SC70-6. Category, Discrete Semiconductor Products.
The SQ1420EEH-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. Company, Vishay Intertechnology. Datasheet, Download ...
Buy new and original Vishay / Siliconix SQ1420EEH-T1-GE3 components. This is a MOSFET N-CH 60V 1.6A SC70-6 Transistors - FETs, MOSFETs - Single.