Mar 6, 2017 · Si4435FDY-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage. VDS. -30.
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Order today, ships today. SI4435FDY-T1-GE3 – P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC from Vishay Siliconix. Pricing and Availability on ...
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SI4435FDY-T1-GE3 Vishay / Siliconix MOSFET -30V Vds 20V Vgs SO-8 datasheet, inventory, & pricing.
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SI4435FDY-T1-GE3 Vishay / Siliconix MOSFET -30V Vds 20V Vgs SO-8 datasheet, inventory & pricing.
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SI4435FDY-T1-GE3 Vishay / Siliconix MOSFET -30V Vds 20V Vgs SO-8 datasheets, pricing, and inventory.
P-Channel 30 V (D-S) MOSFET. vsh-img-product-image. FEATURES. TrenchFET® Gen III p-channel power MOSFET. 100% Rg tested. Datasheet button Datasheet.
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VISHAY SI4435FDY-T1-GE3 | Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A - This product is available in Transfer Multisort Elektronik.
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Buy Vishay SI4435FDY-T1-GE3 in Reel. MOSFET -30V Vds 20V Vgs SO-8 c from Future Electronics.
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P-CHANNEL 30-V (D-S) MOSFET ; Price for: 1 Each (Supplied on Full Reel) ; Minimum order quantity: 5000 ; Order multiple quantity: 2500 ; Price: $0.159 ; Availability.
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SI4435FDY-T1-GE3 by Vishay. Vishay SI4435FDY-T1-GE3. Mosfet, P-Ch, 30V, 12.6A, 150Deg C, 4.8W Rohs Compliant: Yes |Vishay SI4435FDY-T1-GE3. $ 0.174. Add to BOM.