A 3300V, 400mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. ... Offers a small footprint, high thermal conductivity, and zero reverse recovery ...
APT40SM120B. PRELIMINARY. 1200V, 41A, 80mΩ. Symbol. Parameter. Ratings. Unit. VDSS. Drain Source Voltage. 1200. V. ID. Continuous Drain Current @ TC = 25°C.
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APT40SM120B PRELIMINARY 1200V, 41A, 80mΩ Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi ...
APT40SM120B. Silicon Carbide Power MOSFET 1200V 40A T0-247. Enquire for availability. Enquire about this product. APT40SM120S. Silicon Carbide Power MOSFET ...