The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report ...
Sep 26, 2018 · BFP840ESD. SiGe:C NPN RF bipolar transistor. Product description. The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an.
The device is based on Infineon´s reliable high volume SiGe:C technology. The BFP840ESD provides inherently good input and output power match as well as ...
Mounting Type. Surface Mount ; Package / Case. SC-82A, SOT-343 ; Supplier Device Package. PG-SOT343-4-2 ; Base Product Number. BFP840 ; Link. Datasheets, BFP840ESD.
$0.52 In stock
BFP840ESD. Transistor Type: Bipolar. Technology: SiGe. Operating Frequency: 80 GHz. Collector- Emitter Voltage VCEO Max: 2.25 V. Emitter- Base Voltage VEBO: 2.9 ...
Part #: BFP840ESD. Download. File Size: 1MbKbytes. Page: 28 Pages. Description: Robust Low Noise Silicon Germanium Bipolar RF Transistor.
View BFP840ESD by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.
May 20, 2013 · Legal Disclaimer. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
BFP840ESD Datasheet, Equivalent, Cross Reference Search. Type Designator: BFP840ESD SMD Transistor Code: T8* Material of Transistor: SiGe. Polarity: NPN