Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and ...
Specifications ; Package / Case: SOT-669-5 ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 30 V.
$0.84
BUK9Y22-30B,115 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 37.7A (Tc) ; Drive Voltage (Max ...
Apr 7, 2010 · Ptot total power dissipation Tmb = 25 °C; see Figure 2. -. -. 59.4. W. Tstg storage temperature. -55. -. 175. °C. Tj junction temperature.
NexperiaBUK9Y22-30B,115MOSFETs. Trans MOSFET N-CH 30V 37.7A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R. Download Datasheet. Symbols and Footprints.
BUK9Y22-30B,115 ; Vds - Drain-Source Breakdown Voltage, 30 V ; Id - Continuous Drain Current, 37.7 A ; Rds On - Drain-Source Resistance, 17 mOhms ; Vgs - Gate- ...
Express Technology Group is a leading stocking distributor of Obsolete, Hard to Find, and Active NXP SEMICONDUCTORS - BUK9Y22-30B.
Compatible with Eagle, Altium, Cadence OrCad & Allegro, KiCad, & more. Discover parts from Texas Instruments, Microchip, TE Connectivity, Vishay & more.
Buy BUK9Y22-30B,115 - Nexperia - Power MOSFET, N Channel, 30 V, 37.7 A, 0.019 ohm, SOT-669, Surface Mount. Farnell Slovenija offers fast quotes, ...
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