The DIM200WHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor. (IGBT) module. The IGBT has a wide reverse ...
Part #: DIM200WHS12-E000. Download. File Size: 177Kbytes. Page: 8 Pages. Description: Half Bridge IGBT Module. Manufacturer: Dynex Semiconductor.
Specifications: Collector Emitter Voltage V(br)ceo: 1.2 kV; Collector Emitter Voltage Vces: 2.7 V; Current Ic @ Vce Sat: 200 A; Current Ic Continuous a Max: 200 ...
DIM200WHS12-E datasheet - Half Bridge IGBT Module The ...
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The is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area ( ...
DIM200WHS12-E000 - Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT ; File Size, 152.44K / 8 Page ; Maker, Dynex Semiconductor, Ltd. ; Homepage ; Download, [ ...
Description. SCRs are mainly used in high power, high voltage applications like power regulators, motor controllers, and rectification in high voltage DC ...
DIM200WHS12-E000 Datasheet(PDF) 4 Page - Dynex Semiconductor ; Description, Half Bridge IGBT Module ; Download, 8 Pages ; Scroll/Zoom. 4. Zoom In 100% Zoom Out.
DIM200WHS12-E000 IGBT Chopper Module - Lower Arm Control . FEATURES. 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate.
The DIM200WHS12-E000 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe ...