DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,.
Table 1. Absolute maximum ratings. Symbol. Parameter. Value. Unit. VDS. Drain-source voltage (VGS = 0). 500. V. VDGR. Drain-gate voltage (RGS = 20 kW).
Vishay 5pcs Siliconix IRF820 MOSFET N-Channel 500V 2.5 Amp TO-220 (SY#82): Amazon.com: Industrial & Scientific.
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Transistor IRF820 N-Channel MOSFET 500 Volt 4 Amp TO-220 ; Maximum Drain Source Resistance, 3 Ohms@10V ; Maximum Forward Current, 4A ; Typical Fall Time, 13ns.
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IRF820 is Obsolete and no longer manufactured. Available Substitutes: Direct. IRF820PBF. Vishay Siliconix. In Stock: 1,465. Unit Price: $1.35000.
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IRF820 PRODUCT INFORMATION. Power MOSFET. vsh-img-product-image. FEATURES. Dynamic dV/dt rating. Repetitive avalanche rated. Fast switching.
IRF820 STMicroelectronics MOSFET N-Ch 500 Volt 4 Amp datasheet, inventory, & pricing.
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a ...
IRF820. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ... IRF820. 4.5V. 20us PULSE WIDTH: Tc. = 150°C. 101. VDs, Drain-to-Source Voltage ...