Apr 24, 2014 · IRLML2502PbF. Parameter. Max. Units. VDS. Drain- Source Voltage. 20. V. ID @ TA = 25°C. Continuous Drain Current, VGS @ 4.5V. 4.2. ID @ TA= 70°C.
$0.50 In stock
Order today, ships today. IRLML2502TRPBF – N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23 from Infineon Technologies.
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The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ...
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Oct 28, 2014 · Parameter. Max. Units. VDS. Drain- Source Voltage. 20. V. ID @ TA = 25°C. Continuous Drain Current, VGS @ 4.5V. 4.2. ID @ TA= 70°C.
HEXFET® Power MOSFET ; switching speed and ruggedized device design that HEXFET® power ; dubbed the Micro3™, is ideal for applications where printed circuit ; = ...
$0.14
N Channel Mosfet, 20V, 4.2A, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface ...
IRLML2502PBF ; Gate to Source Voltage (Vgs), 12V ; Height, 1.02mm ; Input Capacitance, 740pF ; Length, 3.04mm ; Max Operating Temperature, 150°C.
£0.33
The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area ...
MYR 1.87
The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area ...