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MMBTH10-4LT1G ; Voltage - Collector Emitter Breakdown (Max). 25V ; Frequency - Transition. 800MHz ; Noise Figure (dB Typ @ f). - ; Gain. - ; Power - Max. 225mW.
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Bipolar junction transistor featuring high current, low saturation voltage and high-speed switching. Learn More.
MMBTH10−4LT1G, SMMBTH10−4LT3G. hFE. 60. 120. −. −. −. 240. −. Collector−Emitter Saturation Voltage. (IC = 4.0 mAdc, IB = 0.4 mAdc). VCE(sat). −. −. 0.5.
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Buy onsemi MMBTH10-4LT1G in Reel. NPN 25 V 225 mW Surface Mount Silicon Transistor - SOT-23 from Future Electronics.
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onsemiMMBTH10-4LT1GRF BJT. Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R. Download Datasheet. Symbols and Footprints. Buy Options Information ...
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TRANSISTOR, NPN, 25V, 4MA, SOT-23 ; Order multiple quantity: 5 ; Price: $0.276 ; Availability. 8,525 In stock. UK Stock. UK stock items are coming from our UK ...
This NPN Bipolar Transistor is designed for general purpose VHF/UHF applications and is housed in the SOT-23 surface mount package.
MYR 1.33
Manufacturer Part No. MMBTH10-4LT1G. Manufacturer: ONSEMI. Order Code: 2774795. Transistor Polarity: NPN. Collector Emitter Voltage Max:.
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Buy MMBTH10-4LT1G - Onsemi - Bipolar - RF Transistor, NPN, 25 V, 800 MHz, 225 mW, 999 A, SOT-23. Farnell Israel offers fast quotes, same day dispatch, ...
MMBTH10-4LT1G. Description: Bipolar Transistors - BJT 25V VHF Mixer NPN ... 0.94 mm. Length: 2.9 mm, 2.9 mm. Maximum Operating Temperature: + 150 C, + 150 C.