MRFE6VP100H 100 W CW over 1.8-2000 MHz, 50 V high ruggedness RF power LDMOS transistor for narrow and broadband ISM, broadcast and aerospace applications.
Description. Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V ; fi(RF) [min] (MHz). 1.8 ; Output Power (Typ) (W) @ Intermodulation Level at Test ...
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NXP MRFE6VP100H Series RF MOSFET Transistors are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for NXP MRFE6VP100H Series ...
Part Number: MRFE6VP100HR5 Manufacturer: NXP Product Description: RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, ...
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Find many great new & used options and get the best deals for 1PCS NEW MRFE6VP100H RF Power LDMOS Transistors High Ruggedness 100W 1.8 at the best online ...
MRFE6VP100H(S)R5 Datasheet by NXP USA Inc. · 1. Measured in 30--512 MHz broadband reference circuit. · 2. Measured in 512 MHz narrowband test circuit. · 3. The ...
... Component Layout — 512 MHz. MRFE6VP100H/S. Rev. 1. CUT. OUT. A. REA. COAX1. COAX2. COAX3. COAX4. C1. B1. L1. C13. C2. C4. C5. C3. C6. C7. L2. C9. C8. B2. L3.
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Description. NEW 1PCS MRFE6VP100H RF Power LDMOS Transistors High Ruggedness 100W 1.8. Notice: Because,the international air shipping forbid to ship liquid ...
NXP Semiconductors, Ldmos, Rf, 100W, Ni-780, Full Reel, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation:100W, ...
