High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Learn More.
STP165N10F4 ; Input Capacitance (Ciss) (Max) @ Vds. 10500 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 315W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
Order today, ships today. STP165N10F4 – N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on ...
The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with. STripFET™ DeepGATE™ technology with a new gate structure. The product is ...
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Part Number # STP165N10F4 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener.
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Description: N-Channel Tube 5.5m Ω @ 60A, 10V ±20V 10500pF @ 25V 180nC @ 10V TO-220-3. Quantity: RFQ. Add to RFQ list. Delivery: Payment: STP165N10F4.
STP165N10F4 MOSFET. Datasheet pdf. Equivalent. Type Designator: STP165N10F4 Marking Code: 165N10F4 Type of Transistor: MOSFET Type of Control Channel: ...
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STP165N10F4 Product Details. The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET DeepGATE technology with a new gate structure.
$26.42
Free Shipping 5PCS/lot STP165N10F4 MOSFET N-CH 100V 120A TO-220 165N10 STP165N10. Delivery. Shipping: US $46.03. Estimated delivery on Mar 04.
Download the STP165N10F4 datasheet from STMicroelectronics. N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2; 2; DeepGATE͐2; 2; Power MOSFET.