Si8466EDB-T2-E1. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage. VDS. 8. V. Gate-source ...
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Order today, ships today. SI8466EDB-T2-E1 – N-Channel 8 V 3.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot from Vishay Siliconix.
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SI8466EDB-T2-E1 Vishay Semiconductors MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1 datasheet, inventory, & pricing.
N-Channel 8 V (D-S) MOSFET. vsh-img-product-image. FEATURES. TrenchFET® power MOSFET. Typical ESD protection 3000 V HBM. Ultra small 1 mm x 1 mm maximum ...
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VISHAY SI8466EDB-T2-E1 | Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W - This product is available in Transfer Multisort Elektronik.
Gate-Source Breakdown Voltage, 0.7 V ; Continuous Drain Current, 5.4 A ; Resistance Drain-Source RDS (on), 0.043 Ohms ; Mounting Style, SMD/SMT.
SI8466EDB MOSFET. Datasheet pdf. Equivalent. Type Designator: SI8466EDB Marking Code: 8466. Type of Transistor: MOSFET Type of Control Channel: N -Channel
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Vishay Siliconix SI8466EDB-T2-E1 ; Manufacturer: Walsin Technology Corporation ; Chip 1 Group NO: SI8466EDB-T2-E1 ; Price: $0.51 ; Datasheet: PDF ; Description: ...
SI8466 Datasheet. Part #: SI8466EDB. Datasheet: 141Kb/9P. Manufacturer: Vishay Siliconix. Description: N-Channel 8 V (D-S) MOSFET. 4 Results.