FEATURES. • Package type: leaded. • Package form: T-1¾. • Dimensions (in mm): Ø 5. • Peak wavelength: λp = 940 nm. • High reliability. • High radiant power.
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TSAL6200 ; Radiant Intensity (Ie) Min @ If. 40mW/sr @ 100mA ; Wavelength. 940nm ; Voltage - Forward (Vf) (Typ). 1.35V ; Viewing Angle. 34° ; Orientation. Top View.
In stock
Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr.
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(24) · In stock
TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a plastic package. Package Including 8 pcs(4pcs* ...
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW. vsh-img-product-image. FEATURES. Package type: leaded. Package form: T-1¾. Dimensions (in mm): Ø 5 ...
$480.00
Buy Vishay TSAL6200 in Bulk. 940 nm 100 mA ±17° Through Hole High Power Infrared Emitting Diode - T-1 3/4 from Future Electronics.
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The TSAL6200 is a 940nm Infrared Emitting Diode in GaAlAs Multi Quantum Well (MQW) technology with high radiant power and high speed. It is suitable for use in ...
TSAL6200 ; Mounting Style, Through Hole ; Wavelength, 940 nm ; Radiant Intensity, 60 mW/sr ; Beam Angle, 34 deg ; If - Forward Current, 100 mA.
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(24) · $6.59 · In stock
uxcell 10pcs 5mm 940nm Infrared Emitter Diode DC 1.35V LED IR Emitter Light Emitting Diodes Clear Blue Round Head TSAL6200 ; Wavelength · 940nm ; Voltage · DC 1.35V
