BerandaMRAM • NASDAQ
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Everspin Technologies Inc
$9,06
Sebelum Jam Perdagangan Normal:(0,77%)-0,070
$8,99
Tutup: 17 Mar, 00.17.32 GMT-4 · USD · NASDAQ · Pernyataan Penyangkalan
Tutup sebelumnya
$8,82
Rentang hari
$8,99 - $9,22
Rentang tahun
$4,34 - $17,24
Kapitalisasi pasar
209,47Â jt USD
Volume Rata-Rata
716,96Â rb
Rasio P/E
-
Hasil dividen
-
Bursa utama
NASDAQ
Berita pasar
Keuangan
Laporan Laba Rugi
Pendapatan
Penghasilan bersih
| (USD) | Des 2025info | Perubahan Y/Y |
|---|---|---|
Pendapatan | 14,80Â jt | 11,78% |
Biaya operasional | 8,58Â jt | 2,75% |
Penghasilan bersih | 1,20Â jt | -1,48% |
Margin laba bersih | 8,08 | -11,89% |
Penghasilan per saham | 0,11 | -12,65% |
EBITDA | -717,00Â rb | 36,15% |
Tarif pajak efektif | 9,67% | — |
Neraca
Total aset
Total liabilitas
| (USD) | Des 2025info | Perubahan Y/Y |
|---|---|---|
Investasi tunai jangka pdk | 44,45Â jt | 5,59% |
Total aset | 84,61Â jt | 8,77% |
Total liabilitas | 15,69Â jt | 3,26% |
Total ekuitas | 68,92 jt | — |
Saham yang beredar | 23,12 jt | — |
Harga terhadap nilai buku | 2,94 | — |
Tingkat pengembalian aset | -3,24% | — |
Tingkat pengembalian modal | -3,77% | — |
Arus Kas
Perubahan kas bersih
| (USD) | Des 2025info | Perubahan Y/Y |
|---|---|---|
Penghasilan bersih | 1,20Â jt | -1,48% |
Kas dari operasi | 2,62Â jt | -31,54% |
Kas dari investasi | -3,94Â jt | -124,18% |
Kas dari pembiayaan | 510,00Â rb | 17,51% |
Perubahan kas bersih | -807,00Â rb | -132,16% |
Arus kas bebas | 110,25Â rb | -94,84% |
Tentang
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Didirikan
2008
Kantor pusat
Situs
Karyawan
85